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SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 2 - FEBRUARY 1995 7 FEATURES * High gain and low saturation voltages COMPLEMENTARY TYPE - PARTMARKING DETAIL - BCX69 BCX68 - CE BCX68-16 - CC BCX68-25 - CD
BCX68
C
E C B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 25 20 5 2 1 1 -65 to +150 UNIT V V V A A W C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(on) 50 85 60 BCX68-16 100 BCX68-25 160 fT C obo 100 25 h FE MIN. 25 20 5 0.1 10 10 0.5 1.0 TYP. MAX. UNIT V V V A A A V V CONDITIONS. I C =100A I C =10mA I E =100A V CB =25V V CB =25V, T a =150C V EB =5V I C =1A, I B =100mA* I C =1A, V CE =1V* IC IC IC IC IC MHz pF =5mA, V CE =10V =500mA, V CE =1V =1A, V CE =1V* =500mA, V CE =1V* =500mA, V CE =1V
375 250 250 400
Transition Frequency Output Capacitance
I C =100mA, V CE =5V, f=100MHz V CB =10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMT449 datasheet.
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